Bipolar resistive switching behaviors of ITO nanowire networks

Bipolar resistive switching behaviors of ITO nanowire networks

Blog Article

We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation.The Ag/ITO-NW networks/Al capacitor exhibits Adjustable Height Desk bipolar resistive switching behavior.The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs.The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state.A stable switching voltages and a clear SIDE TABLE memory window were observed in needle-shaped NWs.

The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.